View S10141-1107S_4916458.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

ccd area image sensor low readout noise, high resolution (pixel size: 12 ? m) s10140/s10141 series www.hamamatsu.com 1 s10140/s10141 series is a family of back-thinned fft-ccd image sensors speci ? cally designed for low-light-level detection in scienti ? c applications. by using the binning operation, s10140/s10141 series can be used as a linear image sensor having a long aperture in the direction of the device length. this makes s10140/s10141 series ideally suited for use in spectrophotom- etry. the binning operation offers signi ? cant improvement in s/n and signal processing speed compared with conventional methods by which signals are digitally added by an external circuit. s10140/s10141 series also features low noise and low dark signal (mpp mode operation). this enables low-light-level detection and long integration time, thus achieving a wide dynamic range. s10140/s10141 series has an effective pixel size of 12 12 ? m and is available in image areas ranging from 12.288 (h) 1.464 (v) mm 2 (1024 122 pixels) up to a large image area of 24.576 (h) 6.072 (v) mm 2 (2048 506 pixels). features applications low readout noise: 4 e - rms typ. high resolution: pixel size 12 12 ? m non-cooled type: s10140 series one-stage te-cooled type: s10141 series line, pixel binning, area scanning wide spectral response range wide dynamic range mpp operation high uv sensitivity with good stability same pin connections as s7030/s7031 series greater than 90% quantum ef ? ciency at peak sensitivity wavelength fluorescence spectrometer, icp industrial inspection requiring semiconductor inspection dna sequencer low-light-level detection raman spectroscopy selection guide type no. cooling number of total pixels number of active pixels active area [mm (h) mm (v)] suitable multichannel detector head s10140-1007 non-cooled 1044 128 1024 122 12.288 1.464 c10150 s10140-1008 1044 256 1024 250 12.288 3.000 s10140-1009 1044 512 1024 506 12.288 6.072 s10140-1107 2068 128 2048 122 24.576 1.464 s10140-1108 2068 256 2048 250 24.576 3.000 s10140-1109 2068 512 2048 506 24.576 6.072 s10141-1007s one-stage te-cooled 1044 128 1024 122 12.288 1.464 c10151 s10141-1008s 1044 256 1024 250 12.288 3.000 s10141-1009s 1044 512 1024 506 12.288 6.072 S10141-1107S 2068 128 2048 122 24.576 1.464 s10141-1108s 2068 256 2048 250 24.576 3.000 s10141-1109s 2068 512 2048 506 24.576 6.072
ccd area image sensor s10140/s10141 series 2 general ratings absolute maximum ratings (ta=25 c) operating conditions (mpp mode, ta=25 c) parameter s10140 series s10141 series pixel size 12 (h) 12 (v) ? m vertical clock phase 2 phases horizontal clock phase 2 phases output circuit one-stage mosfet source follower package 24-pin ceramic dip (refer to dimensional outlines) window * 1 quartz glass ar-coated sapphire * 1: temporary window type (ex. s10140-1107n) is available upon request. parameter symbol min. typ. max. unit operating temperature * 2 to p r - 5 0 - + 5 0 c storage temperature tstg -50 - +70 c output transistor drain voltage v od -0.5 - +30 v reset drain voltage v rd -0.5 - +18 v vertical input source voltage v isv -0.5 - +18 v horizontal input source voltage v ish -0.5 - +18 v vertical input gate voltage v ig1v , v ig2v -10 - +15 v horizontal input gate voltage v ig1h , v ig2h -10 - +15 v summing gate voltage v sg -10 - +15 v output gate voltage v og -10 - +15 v reset gate voltage v rg -10 - +15 v transfer gate voltage v tg -10 - +15 v vertical shift register clock voltage v p1v , v p2v -10 - +15 v horizontal shift register clock voltage v p1h, v p2h -10 - +15 v * 2: package temperature (s10140 series), chip temperature (s10141 series) parameter symbol min. typ. max. unit output transistor drain voltage v od 23 24 25 v reset drain voltage v rd 11 12 13 v output gate voltage v og 2.5 3 3.5 v substrate voltage v ss -0-v test point vertical input source v isv -v rd -v horizontal input source v ish -v rd -v vertical input gate v ig1v , v ig2v -9 -8 - v horizontal input gate v ig1h , v ig2h -9 -8 - v vertical shift register clock voltage high v p1vh , v p2vh 2.5 3 3.5 v low v p1vl , v p2vl -9 -8 -7 horizontal shift register clock voltage high v p1hh , v p2hh 456 v low v p1hl , v p2hl -9 -8 -7 summing gate voltage high v sgh 456 v low v sgl -9 -8 -7 reset gate voltage high v rgh 456 v low v rgl -9 -8 -7 transfer gate voltage high v tgh 2.5 3 3.5 v low v tgl -9 -8 -7 external load resistance r l 90 100 110 k :
ccd area image sensor s10140/s10141 series 3 electrical characteristics (ta=25 c) electrical and optical characteristics (ta=25 c, unless otherwise noted) parameter symbol min. typ. max. unit signal output frequency fc - 250 500 khz vertical shift register capacitance s1014 * -1007 c p1v, c p2v - 800 - pf s1014 * -1008/-1107 - 1600 - s1014 * -1108/-1009 - 3200 - s1014 * -1109 - 6400 - horizontal shift register capacitance s1014 * -1007/-1008/-1009 c p1h , c p2h -80- pf s1014 * -1107/-1108/-1109 - 150 - summing gate capacitance c sg -30-pf reset gate capacitance c rg -30-pf transfer gate capacitance s1014 * -1007/-1008/-1009 c tg -50- pf s1014 * -1107/-1108/-1109 - 70 - charge transfer ef ? ciency * 3 cte 0.99995 0.99999 - - dc output level * 4 vout 16 17 18 v output impedance * 4 zo - 8 - k : power consumption * 4 * 5 p-4-mw * 3: charge transfer ef ? ciency per pixel, measured at half of the full well capacity * 4: the values depend on the load resistance. (typ. v od =24 v, load resistance=100 k : ) * 5: power consumption of the on-chip ampli ? er plus load resistance parameter symbol min. typ. max. unit saturation output voltage vsat - fw sv - v full well capacity vertical fw 45 60 - ke - horizontal 120 150 - summing 150 200 - ccd node sensitivity sv 4 5 6 ? v/e - dark current * 6 mpp mode 25 c ds - 100 1000 e - /pixel/s 0 c - 5 50 readout noise * 7 nr - 4 18 e - rms dynamic range * 8 line binning dr 30000 37500 - - area scanning 15000 18500 - - photo response non-uniformity * 9 prnu - 3 10 % spectral response range o - 200 to 1100 - nm blemish point defect * 10 white spots - --0- black spots - - 10 - cluster defect * 11 --3- column defect * 12 --0- * 6: dark current nearly doubles for every 5 to 7 c increase in temperature. * 7: -50 c, operating frequency is 20 khz. * 8: dynamic range = full well/readout noise * 9: measured at one-half of the saturation output (full well capacity) using led light (peak emission wavelength: 560 nm) * 10: white spots pixels whose dark current is higher than 1 ke - after one-second integration at 0 c. black spots pixels whose sensitivity is lower than one-half of the average pixel output. (measured with uniform light producing one-half of the saturation charge) * 11: 2 to 9 contiguous defective pixels * 12: 10 or more contiguous defective pixels fixed pattern noise (peak to peak) signal 100 [%] photo response non-uniformity (prnu) =
ccd area image sensor s10140/s10141 series spectral response (without window) * 13 dark current vs. temperature spectral transmittance characteristics 4 * 13: spectral response with quartz glass or ar-coated sapphire are decreased according to the spectral transmittance characteristics of window material. type no. window material s10140 series quartz glass * 14 (option: window-less) s10141 series ar-coated sapphire * 15 (option: window-less) s10142 series (two-stage te-cooled types, made to order) ar-coated sapphire * 15 (option: window-less) * 14: resin sealing * 15: hermetic sealing window material quantum efficiency (%) wavelength (nm) (typ. ta=25 c) 0 200 400 600 800 1000 1200 10 20 30 40 50 60 70 80 90 100 front-illuminated back-thinned s10140/s10141 series front-illuminated (uv coat) 0 10 100 200 wavelength (nm) transmittance (%) 300 400 500 600 700 800 900 1000 1100 1200 20 30 40 50 60 70 80 90 100 (typ. ta=25 c) quartz window ar coated sapphire -50 -40 -30 -20 0 -10 10 20 30 temperature (c) 0.01 0.1 1 10 100 1000 dark current (e - /pixel/s) (typ.) kmpdb0255ea kmpdb0254eb kmpdb0110ea
ccd area image sensor s10140/s10141 series 5 device structure (conceptual drawing of top view) 23 22 21 20 14 15 24 1 2 12 11 89 3 4 5 2-bevel signal out 2 n 4 blank pixels 4 blank pixels v=122, 250, 50 h=1024, 2048 4-bevel thinning thinning 1 23 45 2 3 4 5 v h 6-bevel 6-bevel 2 n signal out 13 10 kmpdc0244eb
ccd area image sensor s10140/s10141 series line binning timing chart parameter symbol min. typ. max. unit p1v, p2v, tg * 16 pulse width s1014 * -1007 tpwv 1.5 2 - ? s s1014 * -1008/-1107 3 4- s1014 * -1009/-1108 6 8- s1014 * -1109 12 16 - rise and fall time tprv, tpfv 20 - - ns p1h, p2h * 16 pulse width tpwh 1000 2000 - ns rise and fall time tprh, tpfh 10 - - ns duty ratio - 40 50 60 % sg pulse width tpws 1000 2000 - ns rise and fall time tprs, tpfs 10 - - ns duty ratio - 40 50 60 % rg pulse width tpwr 100 1000 - ns rise and fall time tprr, tpfr 5 - - ns tg ? p1h overlap time tovr 1 2 - ? s * 16: the clock pulses should be overlapped at 50% of clock pulse amplitude. integration period (shutter must be open) vertical binning period (shutter must be closed) p1v p2v, tg p1h p2h, sg readout period (shutter must be closed) 3..126 3..254 3..510 127 255 511 128 256 512 122 + 6 (bevel): s1014 * -1007/-1107 250 + 6 (bevel): s1014 * -1008/-1108 506 + 6 (bevel): s1014 * -1009/-1109 tpwv tov r tpwh, tpws tpwr 123 1043 2067 1044 2068 : s1014 * -1007/-1008/-1009 : s1014 * -1107/-1108/-1109 4..1042 4..2066 12 d19 d2 d1 d20 d3..d10, s1..s2048, d11..d18 rg os s1..s1024 : s1014 * -1007/-1008/-1009 : s1014 * -1107/-1108/-1109 kmpdc0242eb 6
ccd area image sensor s10140/s10141 series 7 area scanning integration period (shutter must be open) p1v rg os p2v, tg p1h p2h, sg readout period (shutter must be closed) enlarged view tpwv tov r tpwr d1 d2 d3 d4 d18 d19 d20 d5..d10, s1..s2048, d11..d17 p2v, tg p1h p2h, sg rg os tpwh, tpws 123 s1..s1024 : s1014 * -1007/-1008/-1009 : s1014 * -1107/-1108/-1109 4..127 4..255 4..511 128 122 + 6 (bevel): s1014 * -1007/-1107 256 250 + 6 (bevel): s1014 * -1008/-1108 512 506 + 6 (bevel): s1014 * -1009/-1109 parameter symbol min. typ. max. unit p1v, p2v, tg * 17 pulse width s1014 * -1007 tpwv 1.5 2 - ? s s1014 * -1008/-1107 3 4- s1014 * -1009/-1108 6 8- s1014 * -1109 12 16 - rise and fall time tprv, tpfv 20 - - ns p1h, p2h * 17 pulse width tpwh 1000 2000 - ns rise and fall time tprh, tpfh 10 - - ns duty ratio - 40 50 60 % sg pulse width tpws 1000 2000 - ns rise and fall time tprs, tpfs 10 - - ns duty ratio - 40 50 60 % rg pulse width tpwr 100 1000 - ns rise and fall time tprr, tpfr 5 - - ns tg ? p1h overlap time tovr 1 2 - ? s * 17: the clock pulses should be overlapped at 50% of clock pulse amplitude. kmpdc0243eb
ccd area image sensor s10140/s10141 series 8 kmpda0208eb dimensional outlines (unit: mm) s10140-1007/-1008/-1009 s10140-1107/-1108/-1109 4.4 0.44 4.8 0.49 2.4 0.15 3.8 0.44 photosensitive surface 1st pin indication pad 3.0 (24 ) 0.5 0.05 window 16.3 * 8.2 * 34.0 0.34 2.54 0.13 22.9 0.30 22.4 0.30 a active area 12.29 * size of window that guarantees the transmittance in the spectral transmittance characteristics graph. s10140-1007: a=1.464 s10140-1008: a=3.000 s10140-1009: a=6.072 24 13 112 3.0 4.4 0.44 2.4 0.15 4.8 0.49 3.8 0.44 window 28.6 * 22.9 0.30 22.4 0.30 active area 24.58 a 8.2 * 44.0 0.44 2.54 0.13 1st pin indication pad s10140-1107: a=1.464 s10140-1108: a=3.000 s10140-1109: a=6.072 (24 ) 0.5 0.05 photosensitive surface * size of window that guarantees the transmittance in the spectral transmittance characteristics graph. 24 13 112 kmpda0207eb
ccd area image sensor s10140/s10141 series s10141-1007s/-1008s/-1009s S10141-1107S/-1108s/-1109s window 16.3 * 8.2 * 34.0 0.34 50.0 0.30 2.54 0.13 22.9 0.30 19.0 4.0 42.0 22.4 0.30 a 7.3 0.63 1.0 7.7 0.68 6.7 0.63 4.8 0.15 active area 12.29 1st pin indication pad 3.0 te-cooler s10141-1007s: a=1.464 s10141-1008s: a=3.000 s10141-1009s: a=6.072 (24 ) 0.5 0.05 photosensitive surface 24 13 112 * size of window that guarantees the transmittance in the spectral transmittance characteristics graph. (24 ) 0.5 7.3 0.63 1.0 3.0 6.7 0.63 4.8 0.15 7.7 0.68 1st pin indication pad a 4.0 19.0 22.4 0.30 22.9 0.30 44.0 0.44 52.0 60.0 0.30 2.54 0.13 window 28.6 * active area 24.58 8.2 * S10141-1107S: a=1.464 s10141-1108s: a=3.000 s10141-1109s: a=6.072 te-cooler photosensitive surface * size of window that guarantees the transmittance in the spectral transmittance characteristics graph. 24 13 1 12 kmpda0209ec kmpda0210ec 9
ccd area image sensor s10140/s10141 series 10 speci ? cations of built-in te-cooler (typ.) pin connections parameter symbol condition s10141-1007s/-1008s/-1009s S10141-1107S/-1108s/-1109s unit internal resistance rint ta=25 c 2.5 1.2 : maximum current * 19 imax tc * 20 =th * 21 =25 c 1.5 3.0 a maximum voltage vmax tc * 20 =th * 2 1 =25 c 3.8 3.6 v maximum heat absorption * 21 qmax 3.4 5.1 w maximum temperature of heat radiating side -7070c * 19: if the current greater than this value ows into the thermoelectric cooler, the heat absorption begins to decrease due to the joule heat. it should be noted that this value is not the damage threshold value. to protect the thermoelectric cooler and maintain s table operation, the supply current should be less than 60 % of this maximum current. * 20: temperature of the cooling side of thermoelectric cooler. * 21: temperature of the heat radiating side of thermoelectric cooler. * 22: this is a theoretical heat absorption level that offsets the temperature difference in the thermoelectric cooler when the m aximum current is supplied to the unit. pin no. s10140 series s10141 series remark (standard operation) symbol function symbol function 1 rd reset drain rd reset drain +12 v 2 os output transistor source os output transistor source r l =100 k : 3 od output transistor drain od output transistor drain +24 v 4 og output gate og output gate +3 v 5 sg summing gate sg summing gate same pulse as p2h 6- - 7- - 8 p2h ccd horizontal register clock-2 p2h ccd horizontal register clock-2 9 p1h ccd horizontal register clock-1 p1h ccd horizontal register clock-1 10 ig2h test point (horizontal input gate-2) ig2h test point (horizontal input gate-2) -8 v 11 ig1h test point (horizontal input gate-1) ig1h test point (horizontal input gate-1) -8 v 12 ish test point (horizontal input source) ish test point (horizontal input source) connect to rd 13 tg * 18 transfer gate tg * 18 transfer gate same pulse as p2v 14 p2v ccd vertical register clock-2 p2v ccd vertical register clock-2 15 p1v ccd vertical register clock-1 p1v ccd vertical register clock-1 16 - th1 thermistor 17 - th2 thermistor 18 - p- te-cooler- 19 - p+ te-cooler+ 20 ss substrate (gnd) ss substrate (gnd) gnd 21 isv test point (vertical input source) isv test point (vertical input source) connect to rd 22 ig2v test point (vertical input gate-2) ig2v test point (vertical input gate-2) -8 v 23 ig1v test point (vertical input gate-1) ig1v test point (vertical input gate-1) -8 v 24 rg reset gate rg reset gate * 18: isolation gate between vertical register and horizontal register. in standard operation, tg should be applied the same puls e as p2v.
ccd area image sensor s10140/s10141 series 11 kmpdb0111eb s10141-1007s/-1008s/-1009s S10141-1107S/-1108s/-1109s 0 1 2 3 voltage (v) ccd temperature (c) 4 7 6 5 -40 -30 2.0 1.5 1.0 current (a) 0.5 0 -20 -10 0 10 20 30 (typ. ta=25 c) voltage vs. current ccd temperature vs. current 0 1 2 3 voltage (v) ccd temperature (c) 4 7 6 5 -40 -30 4 3 2 current (a) 1 0 -20 -10 0 10 20 30 (typ. ta=25 c) voltage vs. current ccd temperature vs. current 10 k 220 240 260 temperature (k) resistance 280 300 100 k 1 m specifications of built-in temperature sensor a chip thermistor is built in the same package with a ccd chip, and the ccd chip temperature can be monitored with it. a relati on between the thermistor resistance and absolute temperature is expressed by the following equation. r t1 = r t2 exp b t1/t2 (1/t1 - 1/t2) r t1 : resistance at absolute temperature t1 [k] r t2 : resistance at absolute temperature t2 [k] b t1/t2 : b constant [k] the characteristics of the thermistor used are as follows. r 298 =10 k : b 298/323 =3450 k kmpdb0178ea kmpdb0179ea
ccd area image sensor s10140/s10141 series precaution for use (electrostatic countermeasures) element cooling/heating temperature incline rate o handle these sensors with bare hands or wearing cotton gloves. in addition, wear anti-static clothing or use a wrist band with an earth ring, in order to prevent electrostatic damage due to electrical charges from friction. o avoid directly placing these sensors on a work-desk or work-bench that may carry an electrostatic charge. o provide ground lines or ground connection with the work- oor, work-desk and work-bench to allow static electricity to discharge. o ground the tools used to handle these sensors, such as tweezers and soldering irons. it is not always necessary to provide all the electrostatic measures stated above. implement these measures according to the am ount of damage that occurs. when cooling the ccd by an externally attached cooler, set the cooler operation so that the temperature gradient (rate of tempe rature change) for cooling or allowing the ccd to warm back is less than 5 k/minute. 12 multichannel detector heads c10150, c10151 features designed for back-thinned ccd area image sensor c10150: for non-cooled type (s10140 series) c10151: for te-cooled type (s10141 series) line binning operation/area scanning operation driver/amplifier circuit for low noise ccd operation highly stable temperature controller (c10151) cooling temperature: -10 0.05 c simple signal input operation compact configuration multichannel detector head controller c7557-01 features for control of multichannel detector head and data acquisition easy control and data acquisition using supplied software via usb interface
www.hamamatsu.com information described in this material is current as of january, 2011. product specifications are subject to change without pri or notice due to improvements or other reasons. before assembly into final products, please contact us for the delivery specification sheet to check the latest inform ation. type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(x)" which means preliminary specifications or a suffix "(z)" which means developmental specifications. the product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovere d and reported to us within that one year period. however, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. hamamatsu photonics k.k., solid state division 1126-1 ichino-cho, higashi-ku, hamamatsu city, 435-8558 japan, telephone: (81) 53-434-3311, fax: (81) 53-434-5184 u.s.a.: hamamatsu corporation: 360 foothill road, p.o.box 6910, bridgewater, n.j. 08807-0910, u.s.a., telephone: (1) 908-231-0 960, fax: (1) 908-231-1218 germany: hamamatsu photonics deutschland gmbh: arzbergerstr. 10, d-82211 herrsching am ammersee, germany, telephone: (49) 8152- 375-0, fax: (49) 8152-265-8 france: hamamatsu photonics france s.a.r.l.: 19, rue du saule trapu, parc du moulin de massy, 91882 massy cedex, france, teleph one: 33-(1) 69 53 71 00, fax: 33-(1) 69 53 71 10 united kingdom: hamamatsu photonics uk limited: 2 howard court, 10 tewin road, welwyn garden city, hertfordshire al7 1bw, unit ed kingdom, telephone: (44) 1707-294888, fax: (44) 1707-325777 north europe: hamamatsu photonics norden ab: smidesv?gen 12, se-171 41 solna, sweden, telephone: (46) 8-509-031-00, fax: (46) 8 -509-031-01 italy: hamamatsu photonics italia s.r.l.: strada della moia, 1 int. 6, 20020 arese, (milano), italy, telephone: (39) 02-935-81- 733, fax: (39) 02-935-81-741 ccd area image sensor s10140/s10141 series cat. no. kmpd1094e07 jan. 2011 dn connection example ac cable (100 to 240 v; included with the c7557-01 ) pc (windows 2000/xp/vista) c7557-01 usb cable (included with the c7557-01) image sensor + multichannel detector head (usb 2.0) shutter * timing pulse dedicated cable (included with the c7557-01) * shutter, etc. are not available. te control i/o signal i/o power trig. kaccc0402ea 13

▲Up To Search▲

Price & Availability of S10141-1107S

	To Download S10141-1107S Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .